期刊論文- Chie-In Lee
出版年月 | 著作類別 | 著作名稱 | 作者 | 收錄出處 |
Oct-22 | 期刊論文 | Deep neural network RF model for SiGe HBT in breakdown regime | C.I. Lee, S.C. Li, S.Y. Zhang, and J.H. Yang | IEEE Microwave and Wireless Components Letters |
Oct-22 | 期刊論文 | Investigation of four-port characteristic dependence on gate length for MOSFETs in the breakdown region | C.I. Lee, W.C. Lin, and Y.T. Lin | IEEE Transactions on Electron Devices |
Jun-17 | 期刊論文 | An improved large-signal model by artificial neural network for the MOSFETs operating in the breakdown region | C. I. Lee, Y. T. Lin, and W. C. Lin | Journal of Electromagnetic Waves and Applications |
May-17 | 期刊論文 | Investigation of time-domain locus of SiGe HBTs in the avalanche region by using the X-parameter measurement under large signal drive | C. I. Lee,Y. T. Lin,W. C. Lin | IEEE Microwave and Wireless Components Letters |
Feb-17 | 期刊論文 | An improved millimeter-wave general cascade de-embedding method for 110 GHz on-wafer transistor measurements | C. I. Lee,W. C. Lin,Y. T. Lin | IEEE Transactions on Semiconductor Manufacturing |
Sep-16 | 期刊論文 | Noise parameter analysis of SiGe HBTs for different sizes in the breakdown region | C. I. Lee,Y. T. Lin,W. C. Lin | Active and Passive Electronic Components |
Aug-16 | 期刊論文 | Small-signal modeling for p-n junctions in the breakdown region at different temperatures using artificial neural networks | C. I. Lee,Y. T. Lin,W. C. Lin | Journal of Electromagnetic Waves and Applications |
May-16 | 期刊論文 | Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series | C. I. Lee,Y. T. Lin,W. C. Lin | Microelectronics Reliability |
Feb-16 | 期刊論文 | An improved artificial neural network RF noise model for the MOSFETs operating in the avalanche region | C. I. Lee,Y. T. Lin,W. C. Lin | Electronics Letters |
Feb-16 | 期刊論文 | Large-signal characterization of pHEMT under different load conditions by using X-parameters | C. I. Lee,Y. T. Lin,W. C. Lin | IEEE Microwave and Wireless Components Letters |
Dec-15 | 期刊論文 | An improved noise model for SiGe HBT with an inductive breakdown network in the avalanche region | C. I. Lee,Y. T. Lin,W. C. Lin | IEEE Transactions on Device and Materials Reliability |
Dec-15 | 期刊論文 | Gate length dependence on large-signal output characteristics of the MOSFETs in the breakdown region by using X-parameter model | C. I. Lee,W. C. Lin,Y. T. Lin | IEEE Electron Device Letters |
Sep-15 | 期刊論文 | An improved VBIC large-signal equivalent-circuit model for SiGe HBT with an inductive breakdown network by X-parameters | C. I. Lee,Y. T. Lin,W. C. Lin | IEEE Transactions on Microwave Theory and Techniques |
Jul-15 | 期刊論文 | Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series | C. I. Lee,W. C. Lin | Microelectronics Reliability |
Jul-15 | 期刊論文 | Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters | C. I. Lee,W. C. Lin,Y. T. Lin | Journal of Electromagnetic Waves and Applications |
Apr-15 | 期刊論文 | An improved cascade-based noise de-embedding method for on-wafer noise parameter measurements | C. I. Lee,W. C. Lin,Y. T. Lin | IEEE Electron Device Letters |
Apr-15 | 期刊論文 | Temperature dependence on RF avalanche breakdown of RF MOSFETs in the impact ionization region | C. I. Lee,W. C. Lin,Y. T. Lin | Microwave and Optical Technology Letters |
Mar-15 | 期刊論文 | An improved four-port equivalent circuit model of RF MOSFETs for breakdown operation | C. I. Lee,Y. T. Lin,W. C. Lin | IEEE Transactions on Device and Materials Reliability |
Feb-15 | 期刊論文 | Investigation of RF avalanche inductive effect on reduction of intermodulation distortion of MOSFETs using volterra series analysis | C. I. Lee,W. C. Lin,Y. T. Lin,B. S. Yang | IEEE Transactions on Microwave Theory and Techniques |
Feb-15 | 期刊論文 | MOSFET channel resistance characterization from the triode region to impact ionization region with the inductive breakdown network | C. I. Lee,W. C. Lin | Microelectronics Reliability |
Jan-15 | 期刊論文 | A simple and accurate pad-thru-short de-embedding method based on systematic analysis for RF device characterization | C. I. Lee,W. C. Lin | IEEE Transactions on Electron Devices |
Jan-15 | 期刊論文 | SiGe HBT large-signal table-based model with the avalanche breakdown effect considered | C. I. Lee,Y. T. Lin,B. R. Su,W. C. Lin | IEEE Transactions on Electron Devices |
Dec-14 | 期刊論文 | Investigation of linearity in the high electric field region for SiGe HBTs based on volterra series | C. I. Lee,Y. T. Lin,W. C. Lin | IEEE Transactions on Device and Materials Reliability |
Sep-14 | 期刊論文 | A new method to determine avalanche multiplication factor using vector network analyzer for p-n junctions | 李杰穎, 林煒程, 林彥廷;Chie-In Lee, Wei-Cheng Lin, Yan-Ting Lin | IEEE Microwave and Wireless Components Letters |
Sep-14 | 期刊論文 | Direct conversion doppler radar vital sign detection system using power management technique | 李杰穎, 林彥廷, 陳志杰, 林煒程,;Chie-In Lee, Yan-Ting Lin, Jhih-Jie Chen, Wei-Cheng Lin | Microwave and Optical Technology Letters |
Jul-14 | 期刊論文 | Radio frequency current-voltage curve including breakdown effect implemented in large signal model for validation | 李杰穎, 林彥廷, 林煒程;Chie-In Lee, Yan-Ting Lin, Wei-Cheng Lin | IEEE Microwave and Wireless Components Letters |
Apr-14 | 期刊論文 | A 2.4 GHz high output power and high efficiency power amplifier operating at inductive breakdown in CMOS technology | 李杰穎, 林煒程, 林彥廷;Chie-In Lee, Wei-Cheng Lin, Yan-Ting Lin | Microelectronics Journal |
Jan-14 | 期刊論文 | Three-port cascade de-embedding methodology with the dangling leg effect considered for pHEMT electron trapping characterization at microwave frequency | C. I. Lee, W. C. Lin, and Y. T. Lin | Microwave and Optical Technology Letters |
Dec-13 | 期刊論文 | A novel low-power transceiver topology for noncontact vital sign detection including the power management technique | 李杰穎, 林彥廷, 陳禹何, 林煒程;Chie-In Lee, Yan-Ting Lin, Yu-Her Chen, Wei-Cheng Lin | Microelectronics Journal |
Aug-13 | 期刊論文 | A novel p-i-n inductor for tunable wideband matching network application | C. I. Lee and W. C. Lin | IEEE Transactions on Electron Devices |
Mar-12 | 期刊論文 | Low-power and high-linearity SiGe HBT low-noise amplifier using IM3 cancellation technique | Chie-In Lee*, Wei-Cheng Lin, Ji-Min Lin | Microelectronic Engineering |
Mar-12 | 期刊論文 | Modeling Inductive Behavior of MOSFET Scattering Parameter S22 in the Breakdown Regime | Chie-In Lee*, Wei-Cheng Lin, and Yan-Tin Lin | IEEE Transactions on Microwave Theory and Techniques |
2006- | 期刊論文 | Inductance probing into the semiconductor breakdown | C. I. Lee, V. H. Ngo, and D. S. Pan | Applied Physics Letters |
2006- | 期刊論文 | New phenomena of mixed breakdown in silicon | C. I. Lee, V. H. Ngo, and D. S. Pan | phys. stat. sol. (b) |
2006- | 期刊論文 | Theory for High Q p-n Junction Avalanche Inductors | Chie-In Lee and Dee-Son Pan | Applied Physics Letters |
瀏覽數:
分享