跳到主要內容區

Top

期刊論文- Chie-In Lee

出版年月 著作類別 著作名稱 作者 收錄出處
Oct-22 期刊論文 Deep neural network RF model for SiGe HBT in breakdown regime C.I. Lee, S.C. Li, S.Y. Zhang, and J.H. Yang IEEE Microwave and Wireless Components Letters
Oct-22 期刊論文 Investigation of four-port characteristic dependence on gate length for MOSFETs in the breakdown region C.I. Lee, W.C. Lin, and Y.T. Lin IEEE Transactions on Electron Devices
Jun-17 期刊論文 An improved large-signal model by artificial neural network for the MOSFETs operating in the breakdown region C. I. Lee, Y. T. Lin, and W. C. Lin Journal of Electromagnetic Waves and Applications
May-17 期刊論文 Investigation of time-domain locus of SiGe HBTs in the avalanche region by using the X-parameter measurement under large signal drive C. I. Lee,Y. T. Lin,W. C. Lin IEEE Microwave and Wireless Components Letters
Feb-17 期刊論文 An improved millimeter-wave general cascade de-embedding method for 110 GHz on-wafer transistor measurements C. I. Lee,W. C. Lin,Y. T. Lin IEEE Transactions on Semiconductor Manufacturing
Sep-16 期刊論文 Noise parameter analysis of SiGe HBTs for different sizes in the breakdown region C. I. Lee,Y. T. Lin,W. C. Lin Active and Passive Electronic Components
Aug-16 期刊論文 Small-signal modeling for p-n junctions in the breakdown region at different temperatures using artificial neural networks C. I. Lee,Y. T. Lin,W. C. Lin Journal of Electromagnetic Waves and Applications
May-16 期刊論文 Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series C. I. Lee,Y. T. Lin,W. C. Lin Microelectronics Reliability
Feb-16 期刊論文 An improved artificial neural network RF noise model for the MOSFETs operating in the avalanche region C. I. Lee,Y. T. Lin,W. C. Lin Electronics Letters
Feb-16 期刊論文 Large-signal characterization of pHEMT under different load conditions by using X-parameters C. I. Lee,Y. T. Lin,W. C. Lin IEEE Microwave and Wireless Components Letters
Dec-15 期刊論文 An improved noise model for SiGe HBT with an inductive breakdown network in the avalanche region C. I. Lee,Y. T. Lin,W. C. Lin IEEE Transactions on Device and Materials Reliability
Dec-15 期刊論文 Gate length dependence on large-signal output characteristics of the MOSFETs in the breakdown region by using X-parameter model C. I. Lee,W. C. Lin,Y. T. Lin IEEE Electron Device Letters
Sep-15 期刊論文 An improved VBIC large-signal equivalent-circuit model for SiGe HBT with an inductive breakdown network by X-parameters C. I. Lee,Y. T. Lin,W. C. Lin IEEE Transactions on Microwave Theory and Techniques
Jul-15 期刊論文 Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series C. I. Lee,W. C. Lin Microelectronics Reliability
Jul-15 期刊論文 Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters C. I. Lee,W. C. Lin,Y. T. Lin Journal of Electromagnetic Waves and Applications
Apr-15 期刊論文 An improved cascade-based noise de-embedding method for on-wafer noise parameter measurements C. I. Lee,W. C. Lin,Y. T. Lin IEEE Electron Device Letters
Apr-15 期刊論文 Temperature dependence on RF avalanche breakdown of RF MOSFETs in the impact ionization region C. I. Lee,W. C. Lin,Y. T. Lin Microwave and Optical Technology Letters
Mar-15 期刊論文 An improved four-port equivalent circuit model of RF MOSFETs for breakdown operation C. I. Lee,Y. T. Lin,W. C. Lin IEEE Transactions on Device and Materials Reliability
Feb-15 期刊論文 Investigation of RF avalanche inductive effect on reduction of intermodulation distortion of MOSFETs using volterra series analysis C. I. Lee,W. C. Lin,Y. T. Lin,B. S. Yang IEEE Transactions on Microwave Theory and Techniques
Feb-15 期刊論文 MOSFET channel resistance characterization from the triode region to impact ionization region with the inductive breakdown network C. I. Lee,W. C. Lin Microelectronics Reliability
Jan-15 期刊論文 A simple and accurate pad-thru-short de-embedding method based on systematic analysis for RF device characterization C. I. Lee,W. C. Lin IEEE Transactions on Electron Devices
Jan-15 期刊論文 SiGe HBT large-signal table-based model with the avalanche breakdown effect considered C. I. Lee,Y. T. Lin,B. R. Su,W. C. Lin IEEE Transactions on Electron Devices
Dec-14 期刊論文 Investigation of linearity in the high electric field region for SiGe HBTs based on volterra series C. I. Lee,Y. T. Lin,W. C. Lin IEEE Transactions on Device and Materials Reliability
Sep-14 期刊論文 A new method to determine avalanche multiplication factor using vector network analyzer for p-n junctions 李杰穎, 林煒程, 林彥廷;Chie-In Lee, Wei-Cheng Lin, Yan-Ting Lin IEEE Microwave and Wireless Components Letters
Sep-14 期刊論文 Direct conversion doppler radar vital sign detection system using power management technique 李杰穎, 林彥廷, 陳志杰, 林煒程,;Chie-In Lee, Yan-Ting Lin, Jhih-Jie Chen, Wei-Cheng Lin Microwave and Optical Technology Letters
Jul-14 期刊論文 Radio frequency current-voltage curve including breakdown effect implemented in large signal model for validation 李杰穎, 林彥廷, 林煒程;Chie-In Lee, Yan-Ting Lin, Wei-Cheng Lin IEEE Microwave and Wireless Components Letters
Apr-14 期刊論文 A 2.4 GHz high output power and high efficiency power amplifier operating at inductive breakdown in CMOS technology 李杰穎, 林煒程, 林彥廷;Chie-In Lee, Wei-Cheng Lin, Yan-Ting Lin Microelectronics Journal
Jan-14 期刊論文 Three-port cascade de-embedding methodology with the dangling leg effect considered for pHEMT electron trapping characterization at microwave frequency C. I. Lee, W. C. Lin, and Y. T. Lin Microwave and Optical Technology Letters
Dec-13 期刊論文 A novel low-power transceiver topology for noncontact vital sign detection including the power management technique 李杰穎, 林彥廷, 陳禹何, 林煒程;Chie-In Lee, Yan-Ting Lin, Yu-Her Chen, Wei-Cheng Lin Microelectronics Journal
Aug-13 期刊論文 A novel p-i-n inductor for tunable wideband matching network application C. I. Lee and W. C. Lin IEEE Transactions on Electron Devices
Mar-12 期刊論文 Low-power and high-linearity SiGe HBT low-noise amplifier using IM3 cancellation technique Chie-In Lee*, Wei-Cheng Lin, Ji-Min Lin Microelectronic Engineering
Mar-12 期刊論文 Modeling Inductive Behavior of MOSFET Scattering Parameter S22 in the Breakdown Regime Chie-In Lee*, Wei-Cheng Lin, and Yan-Tin Lin IEEE Transactions on Microwave Theory and Techniques
2006- 期刊論文 Inductance probing into the semiconductor breakdown C. I. Lee, V. H. Ngo, and D. S. Pan Applied Physics Letters
2006- 期刊論文 New phenomena of mixed breakdown in silicon C. I. Lee, V. H. Ngo, and D. S. Pan phys. stat. sol. (b)
2006- 期刊論文 Theory for High Q p-n Junction Avalanche Inductors Chie-In Lee and Dee-Son Pan Applied Physics Letters
瀏覽數: